Interface-Induced Electron Spin Splitting in SiGe Heterostructures
Abstract
Spin splitting of conduction electron states has been analyzed for all possible point symmetries of SiGe quantum well structures. A particular attention is paid to removal of spin degeneracy caused by the rotoinversion asymmetry of a (001) heterointerface between two diamond-lattice materials. Consequences of the spin splitting on the electron spin relaxation time is discussed.
- Publication:
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arXiv e-prints
- Pub Date:
- February 2003
- DOI:
- 10.48550/arXiv.cond-mat/0302308
- arXiv:
- arXiv:cond-mat/0302308
- Bibcode:
- 2003cond.mat..2308G
- Keywords:
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- Mesoscopic Systems and Quantum Hall Effect
- E-Print:
- 3 pages, 1 figure