Growth of single unit-cell superconducting La 2- xSr xCuO 4 films

We have developed an approach to grow high quality ultra-thin films of La _{2- x}Sr _xCuO ₄ with molecular beam epitaxy, by adding a homoepitaxial buffer layer in order to minimize the degradation of the film structure at the interface. The advantage of this method is to enable a further reduction of the minimal thickness of a superconducting La _1.9Sr _0.1CuO ₄ film. The main result of our work is that a single unit cell (only two copper oxide planes) grown on a SrLaAlO ₄ substrate exhibits a superconducting transition at 12.5 K (zero resistance) and an in-plane magnetic penetration depth λ_ab(0)=535 nm.