Angular dependence of domain wall resistivity in SrRuO3 films
Abstract
SrRuO3 is a 4d itinerant ferromagnet (Tc∼150 K) with stripe domain structure. Using high-quality thin films of SrRuO3 we study the resistivity induced by its very narrow (∼3 nm) Bloch domain walls ρDW (DWR), at temperatures between 2 K and Tc as a function of the angle θ between the electric current and the ferromagnetic domains walls. We find that ρDW(T,θ)=sin2θρDW(T,90)+B(θ)ρDW(T,0), which provides the first experimental indication that the angular dependence of spin accumulation contribution to DWR is sin2θ. We expect magnetic multilayers to exhibit a similar behavior.
- Publication:
-
Physical Review B
- Pub Date:
- April 2003
- DOI:
- 10.1103/PhysRevB.67.134436
- arXiv:
- arXiv:cond-mat/0301400
- Bibcode:
- 2003PhRvB..67m4436F
- Keywords:
-
- 75.60.Ch;
- 73.50.Jt;
- 72.15.Gd;
- Domain walls and domain structure;
- Galvanomagnetic and other magnetotransport effects;
- Condensed Matter - Strongly Correlated Electrons
- E-Print:
- 5 pages, 5 figures