Linear temperature dependence of conductivity in the apparent insulating regime of dilute two-dimensional holes in GaAs
Abstract
The conductivity of extremely high mobility dilute two-dimensional holes in GaAs changes linearly with temperature in the insulating side of the metal-insulator transition. Hopping conduction, characterized by an exponentially decreasing conductivity with decreasing temperature, is not observed when the conductivity is smaller than e2/h. We suggest that strong interactions in a regime close to the Wigner crystallization must be playing a role in the unusual transport.
- Publication:
-
Physical Review B
- Pub Date:
- December 2003
- DOI:
- 10.1103/PhysRevB.68.241308
- arXiv:
- arXiv:cond-mat/0301301
- Bibcode:
- 2003PhRvB..68x1308N
- Keywords:
-
- 73.40.Kp;
- 71.30.+h;
- III-V semiconductor-to-semiconductor contacts p-n junctions and heterojunctions;
- Metal-insulator transitions and other electronic transitions;
- Condensed Matter - Mesoscale and Nanoscale Physics;
- Condensed Matter - Strongly Correlated Electrons
- E-Print:
- 3 pages, 2 figures