Spin-Independent Origin of the Strongly Enhanced Effective Mass in a Dilute 2D Electron System
Abstract
We accurately measure the effective mass in a dilute two-dimensional electron system in silicon by analyzing the temperature dependence of the Shubnikov de Haas oscillations in the low-temperature limit. A sharp increase of the effective mass with decreasing electron density is observed. We find that the enhanced effective mass is independent of the degree of spin polarization, which points to a spin-independent origin of the mass enhancement and is in contradiction with existing theories.
- Publication:
-
Physical Review Letters
- Pub Date:
- July 2003
- DOI:
- 10.1103/PhysRevLett.91.046403
- arXiv:
- arXiv:cond-mat/0301187
- Bibcode:
- 2003PhRvL..91d6403S
- Keywords:
-
- 71.30.+h;
- 71.18.+y;
- 73.40.Qv;
- Metal-insulator transitions and other electronic transitions;
- Fermi surface: calculations and measurements;
- effective mass g factor;
- Metal-insulator-semiconductor structures;
- Condensed Matter - Strongly Correlated Electrons
- E-Print:
- Phys. Rev. Lett. 91, 046403 (2003)