Spin-dependent tunneling through a symmetric semiconductor barrier
Abstract
The problem of electron tunneling through a symmetric semiconductor barrier based on zinc-blende-structure material is studied. The k3 Dresselhaus terms in the effective Hamiltonian of bulk semiconductor of the barrier are shown to result in a dependence of the tunneling transmission on the spin orientation. The difference of the transmission probabilities for opposite spin orientations can achieve several percents for the reasonable width of the barriers.
- Publication:
-
Physical Review B
- Pub Date:
- May 2003
- DOI:
- 10.1103/PhysRevB.67.201304
- arXiv:
- arXiv:cond-mat/0301098
- Bibcode:
- 2003PhRvB..67t1304P
- Keywords:
-
- 72.25.-b;
- 73.63.-b;
- Spin polarized transport;
- Electronic transport in nanoscale materials and structures;
- Condensed Matter - Mesoscale and Nanoscale Physics;
- Condensed Matter - Disordered Systems and Neural Networks
- E-Print:
- 3 pages, Submitted to Phys. Rev. B