Effect of field-effect transistor geometry on charge ordering of transition-metal oxides
Abstract
We examine the effect of field-effect transistor (FET) geometry on the charge ordering phase diagram of transition-metal oxides using numerical simulations of a semiclassical model including long-range Coulomb fields, resulting in nanoscale pattern formation. We find that the phase diagram is unchanged for insulating layers thicker than approximately twice the magnetic correlation length. For very thin insulating layers, the onset of a charge “clump” phase is shifted to lower values of the strength of the magnetic dipolar interaction, and intermediate diagonal stripe and geometric phases can be suppressed. Our results suggest that, for sufficiently thick insulating layers, charge injection in FET geometry can be used to experimentally probe the intrinsic charge ordering phases in these materials.
- Publication:
-
Physical Review B
- Pub Date:
- July 2003
- DOI:
- 10.1103/PhysRevB.68.033101
- arXiv:
- arXiv:cond-mat/0211611
- Bibcode:
- 2003PhRvB..68c3101O
- Keywords:
-
- 71.10.Hf;
- 73.50.-h;
- Non-Fermi-liquid ground states electron phase diagrams and phase transitions in model systems;
- Electronic transport phenomena in thin films;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 4 pages, 4 postscript figures