Photoluminescence investigations of two-dimensional hole Landau levels in p-type single AlxGa1-xAs/GaAs heterostructures
Abstract
We study the energy structure of two-dimensional holes in p-type single Al1-xGaxAs/GaAs heterojunctions under a perpendicular magnetic field. Photoluminescence measurments with low densities of excitation power reveal rich spectra containing both free and bound-carrier transitions. The experimental results are compared with energies of valence-subband Landau levels calculated using a numerical procedure and good agreement is achieved. Additional lines observed in the energy range of free-carrier recombinations are attributed to excitonic transitions. We also consider the role of many-body effects in photoluminescence spectra.
- Publication:
-
Physical Review B
- Pub Date:
- January 2003
- DOI:
- 10.1103/PhysRevB.67.035305
- arXiv:
- arXiv:cond-mat/0211594
- Bibcode:
- 2003PhRvB..67c5305K
- Keywords:
-
- 78.55.Cr;
- 71.55.Eq;
- III-V semiconductors;
- Condensed Matter - Materials Science;
- Condensed Matter - Strongly Correlated Electrons
- E-Print:
- 13 pages, 10 figures, accepted to Physical Review B