Electric-field-induced Mott insulating states in organic field-effect transistors
Abstract
We consider the possibility that the electrons injected into organic field-effect transistors are strongly correlated. A single layer of acenes can be modeled by a Hubbard Hamiltonian similar to that used for the κ-(BEDT-TTF)2X family of organic superconductors. The injected electrons do not necessarily undergo a transition to a Mott insulator state as they would in bulk crystals when the system is half-filled. We calculate the fillings needed for obtaining insulating states in the framework of the slave-boson theory and in the limit of large Hubbard repulsion U. We also suggest that these Mott states are unstable above some critical interlayer coupling or long-range Coulomb interaction.
- Publication:
-
Physical Review B
- Pub Date:
- December 2002
- DOI:
- 10.1103/PhysRevB.66.214528
- arXiv:
- arXiv:cond-mat/0210565
- Bibcode:
- 2002PhRvB..66u4528C
- Keywords:
-
- 74.70.Kn;
- 73.20.-r;
- Organic superconductors;
- Electron states at surfaces and interfaces;
- Condensed Matter - Strongly Correlated Electrons
- E-Print:
- 9 pages, 7 figures