Dynamic structure factor of liquid and amorphous Ge from ab initio simulations

We calculate the dynamic structure factor S(k,ω) of liquid Ge (l-Ge) at temperature T=1250 K, and of amorphous Ge (a-Ge) at T=300 K, using ab initio molecular dynamics. The electronic energy is computed using density-functional theory, primarily in the generalized gradient approximation, together with a plane-wave representation of the wave functions and ultrasoft pseudopotentials. We use a 64-atom cell with periodic boundary conditions, and calculate averages over runs of up to about 16 ps. The calculated liquid S(k,ω) agrees qualitatively with that obtained by Hosokawa et al. [Phys. Rev. B 63, 134205 (2001)] using inelastic x-ray scattering. In a-Ge, we find that the calculated S(k,ω) is in qualitative agreement with that obtained experimentally by Maley et al. [Phys. Rev. Lett. 56, 1720 (1986)]. Our results suggest that the ab initio approach is sufficient to allow approximate calculations of S(k,ω) in both liquid and amorphous materials.