In-plane magnetoconductivity of Si MOSFETs: A quantitative comparison of theory and experiment
Abstract
For densities above n=1.6×1011 cm-2 in the strongly interacting system of electrons in two-dimensional silicon inversion layers, excellent agreement between experiment and the theory of Zala, Narozhny, and Aleiner is obtained for the response of the conductivity to a magnetic field applied parallel to the plane of the electrons. The parameters deduced from fits to the magnetoconductance do not provide quantitative agreement with the observed zero-field temperature dependence. We attribute this to the neglect in the theory of additional scattering terms, which affect the temperature dependence more strongly than the field dependence.
- Publication:
-
Physical Review B
- Pub Date:
- March 2003
- DOI:
- 10.1103/PhysRevB.67.113310
- arXiv:
- arXiv:cond-mat/0204566
- Bibcode:
- 2003PhRvB..67k3310V
- Keywords:
-
- 73.40.Qv;
- 71.30.+h;
- 71.10.Ay;
- 72.10.-d;
- Metal-insulator-semiconductor structures;
- Metal-insulator transitions and other electronic transitions;
- Fermi-liquid theory and other phenomenological models;
- Theory of electronic transport;
- scattering mechanisms;
- Condensed Matter - Strongly Correlated Electrons
- E-Print:
- doi:10.1103/PhysRevB.67.113310