Mechanism of carrier-induced ferromagnetism in magnetic semiconductors
Abstract
Taking into account both random impurity distribution and thermal fluctuations of localized spins, we have performed a model calculation for the carrier (hole) state in Ga1-xMnxAs by using the dynamical coherent potential approximation. The result reveals that carriers are nearly bound to magnetic impurity sites and that the carrier spin strongly couples to the localized d spins on Mn ions. The hopping of carriers among Mn sites causes the ferromagnetic ordering of the localized spins through the double-exchange mechanism. The Curie temperature obtained by using conventional parameters agrees well with the experimental result for Ga1-xMnxAs.
- Publication:
-
Physical Review B
- Pub Date:
- October 2002
- DOI:
- 10.1103/PhysRevB.66.153202
- arXiv:
- arXiv:cond-mat/0204124
- Bibcode:
- 2002PhRvB..66o3202T
- Keywords:
-
- 75.50.Pp;
- 71.23.-k;
- 71.70.Gm;
- Magnetic semiconductors;
- Electronic structure of disordered solids;
- Exchange interactions;
- Condensed Matter - Materials Science;
- Condensed Matter - Statistical Mechanics
- E-Print:
- 7 pages, 4 figures