Electronic structure of In1-xMnxAs studied by photoemission spectroscopy: Comparison with Ga1-xMnxAs
Abstract
We have investigated the electronic structure of the p-type diluted magnetic semiconductor In1-xMnxAs by photoemission spectroscopy. The Mn 3d partial density of states is found to be basically similar to that of Ga1-xMnxAs. However, the impurity-band-like states near the top of the valence band have not been observed by angle-resolved photoemission spectroscopy unlike Ga1-xMnxAs. This difference would explain the difference in transport, magnetic and optical properties of In1-xMnxAs and Ga1-xMnxAs. The different electronic structures are attributed to the weaker Mn 3d-As 4p hybridization in In1-xMnxAs than in Ga1-xMnxAs.
- Publication:
-
Physical Review B
- Pub Date:
- April 2002
- DOI:
- 10.1103/PhysRevB.65.161203
- arXiv:
- arXiv:cond-mat/0203056
- Bibcode:
- 2002PhRvB..65p1203O
- Keywords:
-
- 79.60.Bm;
- 75.50.Pp;
- 75.70.Pa;
- 75.30.Et;
- Clean metal semiconductor and insulator surfaces;
- Magnetic semiconductors;
- Exchange and superexchange interactions;
- Condensed Matter - Materials Science
- E-Print:
- 4 pages, 3 figures