Gallium vacancy and the residual acceptor in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence
Abstract
Positron lifetime, photoluminescence (PL), and Hall measurements were performed to study undoped p-type gallium antimonide materials. A 314 ps positron lifetime component was attributed to Ga vacancy (VGa) related defect. Isochronal annealing studies showed at 300 °C annealing, the 314 ps positron lifetime component and the two observed PL signals (777 and 797 meV) disappeared, which gave clear and strong evidence for their correlation. However, the hole concentration (∼2×1017cm-3) was observed to be independent of the annealing temperature. Although the residual acceptor is generally related to the VGa defect, at least for cases with annealing temperatures above 300 °C, VGa is not the acceptor responsible for the p-type conduction.
- Publication:
-
Applied Physics Letters
- Pub Date:
- May 2002
- DOI:
- arXiv:
- arXiv:cond-mat/0201294
- Bibcode:
- 2002ApPhL..80.3934L
- Keywords:
-
- 78.70.Bj;
- 78.55.Cr;
- 71.55.Eq;
- 61.72.Ji;
- 61.72.Cc;
- 72.80.Ey;
- 72.20.Fr;
- Positron annihilation;
- III-V semiconductors;
- Point defects and defect clusters;
- Kinetics of defect formation and annealing;
- III-V and II-VI semiconductors;
- Low-field transport and mobility;
- piezoresistance;
- Condensed Matter - Materials Science
- E-Print:
- 3 pages, 3 figures