Linear and nonlinear regime of a Random Resistor Network under biased percolation
Abstract
We investigate the steady state of a two-dimensional random resistor network subjected to two competing biased percolations as a function of the bias strength. The properties of the linear and nonlinear regimes are studied by means of Monte Carlo simulations. In constant current conditions, a scaling relation is found between $<R>/<R>_0$ and $I/I_0$, where $<R>$ is the average network resistance, $<R>_0$ the Ohmic resistance and $I_0$ an appropriate threshold value for the onset of nonlinearity. A similar scaling relation is found also for the relative variance of resistance fluctuations. These results are in good agreement with electrical breakdown measurements performed in composite materials.
- Publication:
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arXiv e-prints
- Pub Date:
- January 2002
- DOI:
- arXiv:
- arXiv:cond-mat/0201152
- Bibcode:
- 2002cond.mat..1152P
- Keywords:
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- Condensed Matter - Statistical Mechanics
- E-Print:
- Contribution to the Proceedings of the Workshop CMS2001