Formation of three-particle clusters in heterojunctions and MOSFET structures
Abstract
A novel interaction mechanism in metal-oxide-semiconduction field-effect transistor (MOSFET) structures and GaAs/AlGaAs heterojunctions between the zone electrons of a two-dimensional (2D) gas and charged traps on the insulator side is considered. By applying a canonical transformation, off-diagonal terms in the Hamiltonian due to the trapped level subsystem are excluded. This yields an effective three-particle attractive interaction as well as a pairing interaction inside the 2D electronic band. A type of Bethe-Goldstone equation for three particles is studied to clarify the character of the binding and the energy of the three-particle bound states. The results are used to offer a possible explanation of the metal-insulator transition recently observed in MOSFET and heterojunctions.
- Publication:
-
Physical Review B
- Pub Date:
- November 2002
- DOI:
- 10.1103/PhysRevB.66.195333
- arXiv:
- arXiv:cond-mat/0201077
- Bibcode:
- 2002PhRvB..66s5333N
- Keywords:
-
- 71.30.+h;
- 71.10.-w;
- 73.21.-b;
- 73.30.+y;
- Metal-insulator transitions and other electronic transitions;
- Theories and models of many-electron systems;
- Electron states and collective excitations in multilayers quantum wells mesoscopic and nanoscale systems;
- Surface double layers Schottky barriers and work functions;
- Condensed Matter - Strongly Correlated Electrons;
- Condensed Matter - Superconductivity;
- Nuclear Theory
- E-Print:
- 4 pages