Pressure-induced metallization in solid boron
Abstract
Different phases of solid boron under high pressure are studied by first principles calculations. The α-B12 structure is found to be stable up to 270 GPa. Its semiconductor band gap (1.72 eV) decreases continuously to zero around 160 GPa, where the material transforms to a weak metal. The metallicity, as measured by the density of states at the Fermi level, enhances as the pressure is further increased. The pressure-induced metallization can be attributed to the enhanced boron-boron interactions that cause band overlap. Limited calculations on β boron indicate a similar trend of gap closure.
- Publication:
-
Physical Review B
- Pub Date:
- September 2002
- DOI:
- 10.1103/PhysRevB.66.092101
- arXiv:
- arXiv:cond-mat/0109550
- Bibcode:
- 2002PhRvB..66i2101Z
- Keywords:
-
- 71.20.Nr;
- 61.50.Ah;
- 62.50.+p;
- Semiconductor compounds;
- Theory of crystal structure crystal symmetry;
- calculations and modeling;
- High-pressure and shock wave effects in solids and liquids;
- Condensed Matter - Materials Science
- E-Print:
- 14 pages, 5 figures