Doping induced charge redistribution in the high temperature superconductor HgBa2CuO4
Abstract
To understand the link between doping and electronic properties in high temperature superconductors, we report first-principles calculations on the oxygen doping effect for the single layer cuprate HgBa$_2$CuO$_{4+\delta}$. The doping effect is studied both by supercell and single cell virtual crystal type approaches. We find ionic behavior of the dopant atom up to an optimal doping concentration of $\delta=0.22$. The excess oxygen attracts electrons from the CuO$_2$ plane leading to an increase of the hole concentration in this building block. The maximum amount of holes is reached when the oxygen $p$-shell is nearly completely filled. As a consequence the density of states at the Fermi level exhibits a pronounced maximum at the optimal oxygen content. The calculated hole content as a function of doping is in accordance with experimental findings.
- Publication:
-
arXiv e-prints
- Pub Date:
- September 2001
- DOI:
- 10.48550/arXiv.cond-mat/0109089
- arXiv:
- arXiv:cond-mat/0109089
- Bibcode:
- 2001cond.mat..9089S
- Keywords:
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- Condensed Matter - Superconductivity
- E-Print:
- 4 pages, 4 figures, comments to sule@mfa.kfki.hu