Magnetic-field pinning of a dynamic electron-spin-resonance line in a GaAs/AlxGa1-xAs heterostructure
Abstract
Electrically detected electron spin resonance (ESR) is used to study the hyperfine interaction of the two-dimensional electrons and the nuclei of the host lattice in a GaAs/AlGaAs heterostructure. Under microwave and radio-frequency double excitations, we have observed that the ESR line can be pinned in a very narrow range of magnetic field in the vicinity of the nuclear magnetic resonance (NMR) of the nuclei of the GaAs crystal. Our observations suggest that this pinning effect is the result of a competition process between the ESR-induced dynamic nuclear polarization and the NMR-induced depolarization.
- Publication:
-
Physical Review B
- Pub Date:
- November 2001
- DOI:
- 10.1103/PhysRevB.64.201308
- arXiv:
- arXiv:cond-mat/0108080
- Bibcode:
- 2001PhRvB..64t1308H
- Keywords:
-
- 76.30.-v;
- 72.20.My;
- 73.40.Kp;
- Electron paramagnetic resonance and relaxation;
- Galvanomagnetic and other magnetotransport effects;
- III-V semiconductor-to-semiconductor contacts p-n junctions and heterojunctions;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 4 pages, 4 figures