Epitaxy and magnetotransport properties of the diluted magnetic semiconductor p-Be(1-x)MnxTe
Abstract
We report on the molecular-beam epitaxial growth and magnetotransport properties of p-type BeMnTe, a ferromagnetic diluted magnetic semiconductor. BeMnTe thin-film structures can be grown almost lattice matched to GaAs for Mn concentrations up to 10%. A high p-type doping with nitrogen can be achieved by using a rf plasma source. BeMnTe and BeTe layers have been characterized by magnetotransport measurements. At low temperatures, the BeMnTe samples exhibit a large anomalous Hall effect. A hysteresis in the anomalous Hall effect appears below 2.5 K in the most heavily doped sample, which indicates the occurrence of a ferromagnetic phase.
- Publication:
-
Applied Physics Letters
- Pub Date:
- November 2001
- DOI:
- 10.1063/1.1416160
- arXiv:
- arXiv:cond-mat/0107619
- Bibcode:
- 2001ApPhL..79.3125H
- Keywords:
-
- 81.15.Hi;
- 68.55.Ac;
- 72.20.My;
- 73.50.Jt;
- 72.80.Ey;
- 73.61.Ga;
- Molecular atomic ion and chemical beam epitaxy;
- Nucleation and growth: microscopic aspects;
- Galvanomagnetic and other magnetotransport effects;
- III-V and II-VI semiconductors;
- II-VI semiconductors;
- Condensed Matter - Materials Science
- E-Print:
- pdf only