Ge substitutional defects and the √ 3 ×√ 3 ↔ 3 × 3 transition in α-Sn/Ge(111)
Abstract
The structure and energetics of Ge substitutional defects on the α-Sn/Ge(111) surface are analysed using density functional theory molecular dynamics simulations. An isolated Ge defect induces a very local distortion of the 3 × 3 reconstruction, confined to a significant downwards displacement (-0.31 Å) at the defect site and a modest upward displacement (0.05 Å) of the three Sn nearest neighbours with partially occupied dangling bonds. Dynamical fluctuations between the two degenerate ground states yield the sixfold symmetry observed around a defect in the experiments at room temperature. Defect-defect interactions are controlled by the energetics of the deformation of the 3 × 3 structure: they are negligible for defects on the honeycomb lattice and quite large for a third defect on the hexagonal lattice, explaining the low-temperature defect ordering.
- Publication:
-
Journal of Physics Condensed Matter
- Pub Date:
- August 2002
- DOI:
- 10.1088/0953-8984/14/30/305
- arXiv:
- arXiv:cond-mat/0107121
- Bibcode:
- 2002JPCM...14.7147O
- Keywords:
-
- Condensed Matter - Materials Science
- E-Print:
- 4 pages, Revtex, 7 Encapsulated Postscript figures, uses epsf.sty. Submitted to Phys. Rev. Lett