Quantum-well states in ultrathin Ag(111) films deposited onto H-passivated Si(111)-(1×1) surfaces
Abstract
Ag(111) films were deposited at room temperature onto H-passivated Si(111)-(1×1) substrates, and subsequently annealed at 300 °C. An abrupt nonreactive Ag/Si interface is formed, and very uniform nonstrained Ag(111) films of 6-12 ML have been grown. Angle-resolved photoemission spectroscopy was used to study the valence band electronic properties of these films. Well-defined Ag sp quantum-well states (QWS's) have been observed at discrete energies between 0.5-2 eV below the Fermi level, and their dispersions have been measured along the ΓKbar, ΓM(M')bar, and ΓL symmetry directions. QWS's show a parabolic bidimensional dispersion, with in-plane effective mass of (0.38-0.50)mo, along the ΓKbar and ΓM(M')bar directions, whereas no dispersion has been found along the ΓL direction, indicating the low-dimensional electronic character of these states. The binding energy dependence of the QWS as a function of the Ag film thickness has been analyzed in the framework of the phase accumulation model. A good agreement between experimental data and the above-mentioned model is obtained for the Ag/H/Si(111)-(1×1) system. Hydrogen at the interface not only enhances the Ag film uniformity, but also acts as a barrier modifying the phase change of the Ag-sp electron wave upon reflection at the Ag/Si interface.
- Publication:
-
Physical Review B
- Pub Date:
- May 2002
- DOI:
- 10.1103/PhysRevB.65.195410
- arXiv:
- arXiv:cond-mat/0106104
- Bibcode:
- 2002PhRvB..65s5410A
- Keywords:
-
- 73.21.-b;
- 79.60.-i;
- 81.07.-b;
- Electron states and collective excitations in multilayers quantum wells mesoscopic and nanoscale systems;
- Photoemission and photoelectron spectra;
- Nanoscale materials and structures: fabrication and characterization;
- Condensed Matter - Soft Condensed Matter;
- Condensed Matter - Materials Science
- E-Print:
- 6 pages, 6 figures, submitted to Phys. Rev. B