Disorder-dependence of the critical density in two-dimensional systems: An empirical relation
Abstract
For five different electron and hole systems in two dimensions (Si MOSFETs, p-GaAs, p-SiGe, n-GaAs and n-AlAs), the critical density nc that marks the onset of strong localization is shown to be a single power law function of the scattering rate 1/τ deduced from the maximum mobility. The resulting curve defines the boundary separating a localized phase from a phase that exhibits metallic behavior. The critical density nc → 0 in the limit of infinite mobility.
- Publication:
-
EPL (Europhysics Letters)
- Pub Date:
- February 2002
- DOI:
- 10.1209/epl/i2002-00496-6
- arXiv:
- arXiv:cond-mat/0105629
- Bibcode:
- 2002EL.....57..546S
- Keywords:
-
- 71.30.+h;
- 73.40.Qv;
- Metal-insulator transitions and other electronic transitions;
- Metal-insulator-semiconductor structures;
- Condensed Matter - Strongly Correlated Electrons
- E-Print:
- 2 pages, 1 figure