Spin-polarized transport in GaMnAs multilayers
Abstract
The spin-dependent mobility for the lateral transport of the hole gas in a GaMnAs/GaAs heterostructure containing several metallic-like ferromagnetic layers is calculated. The electronic structure is obtained self-consistently taking into account the direct Coulomb Hartree and exchange-correlation terms, besides the sp-d exchange interaction with the Mn magnetic moments.
- Publication:
-
Applied Physics Letters
- Pub Date:
- November 2001
- DOI:
- arXiv:
- arXiv:cond-mat/0105145
- Bibcode:
- 2001ApPhL..79.3305L
- Keywords:
-
- 72.25.Dc;
- 73.21.Ac;
- 75.70.Cn;
- 75.50.Pp;
- 75.50.Dd;
- 75.30.Et;
- Spin polarized transport in semiconductors;
- Multilayers;
- Magnetic properties of interfaces;
- Magnetic semiconductors;
- Nonmetallic ferromagnetic materials;
- Exchange and superexchange interactions;
- Condensed Matter - Materials Science
- E-Print:
- 3 pages, 3 figures