Low-Density Spin Susceptibility and Effective Mass of Mobile Electrons in Si Inversion Layers

We studied the Shubnikov-de Haas (SdH) oscillations in high-mobility Si-MOS samples over a wide range of carrier densities n~=(1-50)×10¹¹ cm^-2, which includes the vicinity of the apparent metal-insulator transition in two dimensions (2D MIT). Using a novel technique of measuring the SdH oscillations in superimposed and independently controlled parallel and perpendicular magnetic fields, we determined the spin susceptibility χ^*, the effective mass m^*, and the g^* factor for mobile electrons. These quantities increase gradually with decreasing density; near the 2D MIT, we observed enhancement of χ^* by a factor of ~4.7.