Single-electron transistor with metallic microstrips instead of tunnel junctions
Abstract
A single-electron transistor (SET) comprising highly resistive Cr thin-film strips (sheet resistance ∼4 kΩ) instead of traditional tunnel barriers is reported. Two such strips (∼1 μm long) connect two Al outer electrodes to an Al island 1 μm in length equipped with a capacitively coupled gate. This transistor with a total asymptotic resistance of 110 kΩ showed a perfect Coulomb blockade and strictly e-periodic reproducible modulation by the gate in wide ranges of bias (V) and gate (Vg) voltages. In the Coulomb-blockade region (|V|⩽ about 0.5 mV), we observed a strong suppression of the transport current, allowing modulation curves V(Vg) with appreciable amplitude to be measured at a fixed bias current value I as low as 100 fA. The background-charge noise of our SET was found to be similar to that of typical Al/AlOx/Al tunnel-junction single-electron transistors, namely δQ≈5×10-4e/√Hz at 10 Hz. The electron transport mechanism is discussed.
- Publication:
-
Journal of Applied Physics
- Pub Date:
- September 2001
- DOI:
- 10.1063/1.1389758
- arXiv:
- arXiv:cond-mat/0011427
- Bibcode:
- 2001JAP....90.2411K
- Keywords:
-
- 85.35.Gv;
- 73.23.Hk;
- 73.61.At;
- 85.40.Ls;
- Single electron devices;
- Coulomb blockade;
- single-electron tunneling;
- Metal and metallic alloys;
- Metallization contacts interconnects;
- device isolation;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 5 pages incl. 4 figs