Electrochemical carbon nanotube field-effect transistor
Abstract
We explore the electric-field effect of carbon nanotubes (NTs) in electrolytes. Due to the large gate capacitance, Fermi energy (EF) shifts of order ±1 V can be induced, enabling to tune NTs from p to n-type. Consequently, large resistance changes are measured. At zero gate voltage, the NTs are hole-doped in air with |EF|≈0.3-0.5 eV, corresponding to a doping level of ≈1013cm-2. Hole-doping increases in the electrolyte.
- Publication:
-
Applied Physics Letters
- Pub Date:
- February 2001
- DOI:
- arXiv:
- arXiv:cond-mat/0009171
- Bibcode:
- 2001ApPhL..78.1291K
- Keywords:
-
- 73.63.Fg;
- 81.07.De;
- 85.35.Kt;
- 85.65.+h;
- 82.45.Fk;
- 85.30.Tv;
- Nanotubes;
- Nanotube devices;
- Molecular electronic devices;
- Electrodes;
- Field effect devices;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- doi:10.1063/1.1350427