Models of core reconstruction for the 90° partial dislocation in semiconductors
Abstract
We compare the models that have been proposed in the literature for the atomic structure of the 90° partial dislocation in the homopolar semiconductors, silicon, diamond, and germanium. In particular, we examine the traditional single-period and our recently proposed double-period core structures. Ab initio and tight-binding results on the core energies are discussed, and the geometries are compared in the light of the available experimental information about dislocations in these systems. The double-period geometry is found to be the ground-state structure for all three materials. We address boundary-condition issues that have been recently raised concerning these results. The structures of point excitations (kinks, solitons, and kink-soliton complexes) in the two geometries are also reviewed.
- Publication:
-
Journal of Physics Condensed Matter
- Pub Date:
- December 2000
- DOI:
- 10.1088/0953-8984/12/49/301
- arXiv:
- arXiv:cond-mat/0008135
- Bibcode:
- 2000JPCM...1210021N
- Keywords:
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- Condensed Matter - Materials Science
- E-Print:
- 9 pages, with 3 postscript figures embedded. Uses REVTEX and epsf macros. Also available at http://www.physics.rutgers.edu/~dhv/preprints/rn_eds/index.html