Evolution of coherent islands during strained-layer Volmer-Weber growth of Si on Ge(111)
Abstract
Deposition of Si on Ge(111) at growth temperatures of 450-500°C by molecular beam epitaxy produces high densities (>1011 cm-2) of small (width ~10 nm) coherent three-dimensional Si islands. At intermediate temperatures, 550-600°C, islands become incoherent with the Ge(111) substrate when their widths exceed ~18 nm. The activation energy for the maximum island density prior to coalescence is ~1.7 eV over a wide temperature range 450-650°C.
- Publication:
-
Physical Review B
- Pub Date:
- March 2001
- DOI:
- arXiv:
- arXiv:cond-mat/0008083
- Bibcode:
- 2001PhRvB..63l5314R
- Keywords:
-
- 68.55.-a;
- 81.07.-b;
- 81.10.-h;
- 81.15.Hi;
- Thin film structure and morphology;
- Nanoscale materials and structures: fabrication and characterization;
- Methods of crystal growth;
- physics of crystal growth;
- Molecular atomic ion and chemical beam epitaxy;
- Condensed Matter - Materials Science
- E-Print:
- This paper withdrawn by the authors due to errors in the TEM measurements of the densities and sizes of small islands