Systematic study of Ga1-xInxAs self-assembled quantum wires with varying interfacial strain relaxation
Abstract
A systematic theoretical study of the electronic and optical properties of Ga1-xInxAs self-assembled quantum wires (QWRs) made of short-period superlattices with strain-induced lateral ordering is presented. The theory is based on the effective bond-orbital model combined with a valence-force-field (VFF) model. Valence-band anisotropy, band mixing, and effects due to local strain distribution at the atomistic level are all taken into account. Several structure models with varying degrees of alloy mixing for lateral modulation are considered. A VFF model is used to find the equilibrium atomic positions in the QWR structure by minimizing the lattice energy. The strain tensor at each atomic (In or Ga) site is then obtained and included in the calculation of electronic states and optical properties. It is found that different local arrangement of atoms leads to very different strain distribution, which in turn alters the optical properties. In particular, we find that in model structures with thick capping layer the electrons and holes are confined in the Ga-rich region and the optical anisotropy can be reversed due to the variation of lateral alloy mixing, while for model structures with thin capping layer the electrons and holes are confined in the In-rich region, and the optical anisotropy is much less sensitive to the lateral alloy mixing.
- Publication:
-
Journal of Applied Physics
- Pub Date:
- February 2001
- DOI:
- 10.1063/1.1323540
- arXiv:
- arXiv:cond-mat/0005392
- Bibcode:
- 2001JAP....89.2251L
- Keywords:
-
- 68.65.La;
- 73.21.Hb;
- 78.55.Cr;
- 78.66.Fd;
- 81.05.Ea;
- 73.20.At;
- 68.35.Gy;
- Quantum wires;
- III-V semiconductors;
- Surface states band structure electron density of states;
- Mechanical properties;
- surface strains;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 23 pages, and 8 figures