Carrier and light trapping in graded quantum-well laser structures
Abstract
We investigated the carrier and light trapping in GaInAs/AlGaAs single-quantum-well laser structures by means of time-resolved photoluminescence and Raman spectroscopy. The influence of the shape and depth of the confinement potential and of the cavity geometry was studied by using different AlGaAs/GaAs short-period superlattices as barriers. Our results show that grading the optical cavity improves considerably both carrier and light trapping in the quantum well, and that the trapping efficiency is enhanced by increasing the graded confining potential.
- Publication:
-
Applied Physics Letters
- Pub Date:
- June 2000
- DOI:
- arXiv:
- arXiv:cond-mat/0004440
- Bibcode:
- 2000ApPhL..76.3540A
- Keywords:
-
- 78.66.Fd;
- 42.55.Px;
- 78.47.+p;
- 42.60.Da;
- 78.55.Cr;
- 78.30.Fs;
- III-V semiconductors;
- Semiconductor lasers;
- laser diodes;
- Time-resolved optical spectroscopies and other ultrafast optical measurements in condensed matter;
- Resonators cavities amplifiers arrays and rings;
- III-V and II-VI semiconductors;
- Condensed Matter - Materials Science
- E-Print:
- PDF-format, 15 pages (including 4 figures), Applied Physics Letters (June 2000)