Surface transport and barrier effects in metal halide perovskites explored by bias polarity switching

Surface transport and barrier effects in metal halide perovskites explored by bias polarity switching. By bias polarity switching we experimentally proved that free and trapped holes accumulate beneath the contact barrier. Further investigation proved that the duration of bias pulse changes surface properties that surprisingly affect only free holes. Temperature dependence of accumulated hole dissipation revealed two activation energies 150meV the height of the barrier and 770meV corresponding to a yet unknown process.