Systematic characterization of nanoscale h-BN quantum sensor spots created by helium-ion microscopy

The nanosized boron vacancy (VB‑) defect spot in hexagonal boron nitride (h-BN) is promising for a local magnetic field quantum sensor. One of its advantages is that a helium-ion microscope can make a spot at any location in an h-BN flake with nanometer accuracy. In this study, we investigate the properties of the created nanosized VB‑ defect spots by systematically varying three conditions: the helium-ion dose, the thickness of the h-BN flakes, and the substrate on which the h-BN flakes are attached. The physical background of the results obtained is successfully interpreted using Monte Carlo calculations. From the findings obtained here, a guideline for their optimal creation conditions is obtained to maximize its performance as a quantum sensor concerning sensitivity and localization.