Sub-Kelvin Extension of the Theoretical Limit of MOSFET Subthreshold Swing

The theoretical limit of subthreshold swing in MOSFETs is extended down to sub-Kelvin temperatures. By including the band and band-tail states, the existence of a new phase 4 is derived from the theory. In phase 4, the subthreshold swing plateaus again when the Fermi level saturates inside the band. The model for subthreshold swing in phase 4 is proportional to a Fermi voltage instead of the thermal voltage. A short formula for the slope factor in phase 3 is also derived which allows to extract the subband density-of-states and effective mass. The phase-4 model allows to extract the Fermi level position. The proposed theoretical model is validated against experimental data from the recent literature. Even for a sharp band edge, the theory predicts that the subthreshold swing deviates from the Boltzmann thermal limit at sub-Kelvin temperatures.