Giant Enhancement of Hole Mobility for 4H-Silicon Carbide through Suppressing Interband Electron–Phonon Scattering
Abstract
4H-Silicon Carbide (4H-SiC) possesses a high Baliga figure of merit, making it a promising material for power electronics. However, its applications are limited by its low hole mobility. Herein, we found that the hole mobility of 4H-SiC is mainly limited by the strong interband electron-phonon scattering using mode-level first-principles calculations. Our research indicates that applying compressive strain can reverse the sign of crystal-field splitting and change the ordering of electron bands close to the valence band maximum. Therefore, the interband electron-phonon scattering is severely suppressed, and the out-of-plane hole mobility of 4H-SiC can be enhanced by 200% with 2% uniaxial compressive strain applied. This work provides new insights into the electron transport mechanisms in semiconductors and suggests a strategy to improve hole mobility that could be applied to other semiconductors with hexagonal crystalline geometries.
- Publication:
-
Nano Letters
- Pub Date:
- August 2024
- DOI:
- 10.1021/acs.nanolett.4c02730
- arXiv:
- arXiv:2406.02874
- Bibcode:
- 2024NanoL..2410569S
- Keywords:
-
- Condensed Matter - Materials Science;
- Physics - Computational Physics
- E-Print:
- 22 pages, 4 figures