Structural, electronic, and optical properties of 6H-SiC layers synthesized by implantation of carbon ions into silicon
Abstract
Systematic studies of the formation of SiC layer on carbon ions-bombarded surface of Si were performed. Amorphization of carbon substrate at low fluence of ion beam were detected. Absence of the segregation of carbon impurities were observed for low fluences. Formation of high-quality 6H-SiC films at highest fluence were detected. Excessive carbon demonstrate tendency to formation of oxidized disordered nanostructures.
- Publication:
-
Applied Surface Science
- Pub Date:
- September 2024
- DOI:
- 10.1016/j.apsusc.2024.160379
- arXiv:
- arXiv:2405.18049
- Bibcode:
- 2024ApSS..66660379B
- Keywords:
-
- Condensed Matter - Materials Science;
- Physics - Applied Physics
- E-Print:
- Accepted to the Appl. Surf. Sci. journal