Impact of Top SiO2 interlayer Thickness on Memory Window of Si Channel FeFET with TiN/SiO2/Hf0.5Zr0.5O2/SiOx/Si (MIFIS) Gate Structure
Abstract
We study the impact of top SiO2 interlayer thickness on memory window of Si channel FeFET with TiN/SiO2/Hf0.5Zr0.5O2/SiOx/Si (MIFIS) gate structure. The memory window increases with thicker top SiO2. We realize the memory window of 6.3 V for 3.4 nm top SiO2. Moreover, we find that the endurance characteristic degrades with increasing the initial memory window.
- Publication:
-
arXiv e-prints
- Pub Date:
- April 2024
- DOI:
- 10.48550/arXiv.2404.15825
- arXiv:
- arXiv:2404.15825
- Bibcode:
- 2024arXiv240415825H
- Keywords:
-
- Physics - Applied Physics
- E-Print:
- 4 page 7 figures