Stabilizing perpendicular magnetic anisotropy with strong exchange bias in PtMn/Co by magneto-ionics
Abstract
Electric field control of magnetic properties offers a broad and promising toolbox for enabling ultra-low power electronics. A key challenge with high technological relevance is to master the interplay between the magnetic anisotropy of a ferromagnet and the exchange coupling to an adjacent antiferromagnet. Here, we demonstrate that magneto-ionic gating can be used to achieve a very stable out-of-plane (OOP) oriented magnetization with strong exchange bias in samples with as-deposited preferred in-plane (IP) magnetization. We show that the perpendicular interfacial anisotropy can be increased by a factor of 2.2 in the stack Ta/Pt/PtMn/Co/HfO2 by applying -2.5 V gate voltage over 3 nm HfO2, causing a reorientation of the magnetization from IP into OOP with a strong OOP exchange bias of more than 50 mT. Comparing two thicknesses of PtMn, we identify a notable trade-off: while thicker PtMn yields a significantly larger exchange bias, it also results in a slower response to ionic liquid gating. These results pave the way for post-deposition electrical tailoring of magnetic anisotropy and exchange bias in samples requiring significant exchange bias.
- Publication:
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arXiv e-prints
- Pub Date:
- April 2024
- DOI:
- 10.48550/arXiv.2404.08783
- arXiv:
- arXiv:2404.08783
- Bibcode:
- 2024arXiv240408783B
- Keywords:
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- Condensed Matter - Materials Science;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- main manuscript and supplementary material