Easy-to-configure zero-dimensional valley-chiral modes in a graphene point junction
Abstract
The valley degree of freedom in 2D materials can be manipulated for low-dissipation quantum electronics called valleytronics. At the boundary between two regions of bilayer graphene with different atomic or electrostatic configuration, valley-polarized current has been realized. However, the demanding fabrication and operation requirements limit device reproducibility and scalability toward more advanced valleytronics circuits. We demonstrate a new device architecture of a point junction where a valley-chiral 0D PN junction is easily configured, switchable, and capable of carrying valley current with an estimated polarization of ~80%. This work provides a new building block in manipulating valley quantum numbers and scalable valleytronics.
- Publication:
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arXiv e-prints
- Pub Date:
- April 2024
- DOI:
- 10.48550/arXiv.2404.01027
- arXiv:
- arXiv:2404.01027
- Bibcode:
- 2024arXiv240401027D
- Keywords:
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- Condensed Matter - Mesoscale and Nanoscale Physics