Band alignment of grafted monocrystalline Si (001)/β-Ga2O3 (010) p-n heterojunction determined by X-ray photoelectron spectroscopy
Abstract
A monocrystalline Si/β-Ga2O3 p-n heterojunction is fabricated via grafting. Two methods utilizing different data sets are used for band alignment calculation. An identical band alignment is obtained from both methods. The measured band alignment matches the prediction by the electron affinity rule.
- Publication:
-
Applied Surface Science
- Pub Date:
- May 2024
- DOI:
- 10.1016/j.apsusc.2024.159615
- arXiv:
- arXiv:2312.00771
- Bibcode:
- 2024ApSS..65559615G
- Keywords:
-
- Band alignment;
- X-ray photoelectron spectroscopy;
- Beta-phase gallium oxide;
- Semiconductor grafting;
- Silicon nanomembrane;
- Interface;
- Condensed Matter - Materials Science
- E-Print:
- 18 pages, 5 figures