Learning and Controlling Silicon Dopant Transitions in Graphene using Scanning Transmission Electron Microscopy
Abstract
We introduce a machine learning approach to determine the transition dynamics of silicon atoms on a single layer of carbon atoms, when stimulated by the electron beam of a scanning transmission electron microscope (STEM). Our method is data-centric, leveraging data collected on a STEM. The data samples are processed and filtered to produce symbolic representations, which we use to train a neural network to predict transition probabilities. These learned transition dynamics are then leveraged to guide a single silicon atom throughout the lattice to pre-determined target destinations. We present empirical analyses that demonstrate the efficacy and generality of our approach.
- Publication:
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arXiv e-prints
- Pub Date:
- November 2023
- DOI:
- 10.48550/arXiv.2311.17894
- arXiv:
- arXiv:2311.17894
- Bibcode:
- 2023arXiv231117894S
- Keywords:
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- Condensed Matter - Mesoscale and Nanoscale Physics;
- Condensed Matter - Materials Science;
- Computer Science - Machine Learning