Robust Diamond/\b{eta}-Ga2O3 Hetero-p-n-junction Via Mechanically Integrating Their Building Blocks
Abstract
We report a novel approach for crafting robust diamond/\b{eta}-Ga2O3 hetero-p-n-junctions through the mechanical integration of their bulk materials. This resulting heterojunction, with a turn-on voltage of ~2.7 V at room temperature, exhibits resilient electrical performance across a temperature spectrum up to 125°C, displaying minimal hysteresis-measuring as low as 0.2 V at room temperature and below 0.7 V at 125°C. Remarkably, the ideality factor achieves a record low value of 1.28, setting a new benchmark for diamond/ \b{eta}-Ga2O3 heterojunctions. The rectification ratio reaches over 10^8 at different temperatures. This effortlessly fabricated and remarkably resilient diamond/Ga2O3 hetero-p-n-junction pioneers a novel pathway for the exploration and fabrication of heterojunctions for ultra-wide bandgap semiconductors with substantial lattice mismatch and different thermal expansion coefficients.
- Publication:
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arXiv e-prints
- Pub Date:
- November 2023
- DOI:
- 10.48550/arXiv.2311.16323
- arXiv:
- arXiv:2311.16323
- Bibcode:
- 2023arXiv231116323R
- Keywords:
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- Condensed Matter - Materials Science;
- Physics - Applied Physics
- E-Print:
- 13 pages, 4 figures, 1 table, journal and this draft has been submitted to 'Applied Physics Letters'