Electrical transport in epitaxially grown undoped and Si-doped degenerate GaN films

This study investigates the electrical transport properties of undoped and Si-doped, degenerate GaN heteroepitaxial films grown on sapphire by reactive rf sputtering of GaAs (and Si) in Ar-N₂ mixture. The room temperature electrical measurements showed that the resistivity of undoped GaN film grown at 100% N₂ was ∼2 × 10⁵ Ω cm, which reduced to ∼1 Ω cm in Si-doped film, revealing the effect of Si doping. With decrease of N₂ from 100% to 75%, the carrier concentration of Si-doped films increased from ∼7 × 10¹⁸ cm^-3 to ∼2 × 10¹⁹ cm^-3, but remained practically unchanged as N₂ was decreased to 20%, which is explained by effects due to saturation of Si doping and increase of Ga interstitials as well as compensation by N interstitials and Ga vacancies. Undoped and Si-doped films grown below 20% N₂ displayed similar carrier concentrations (∼10²⁰ cm^-3), due to dominance of Ga interstitials. Both undoped and Si-doped films were degenerate and displayed increase of mobility with carrier concentration and temperature, which was analyzed by the combined effect of ionized impurity and dislocation scattering, using compensation ratio as fitting parameter. At carrier concentrations ≲10¹⁹ cm^-3, the mobility was governed by both ionized impurity and dislocation scattering, while at higher carrier concentrations, ionized impurity scattering was found to dominate, limited by compensation due to acceptors. In spite of the degenerate character, the films displayed a small decrease of carrier concentration with temperature, along with a nearly linear decrease of mobility, which are explained by a marginal increase of compensation ratio with decrease of temperature, taking into account the band edge fluctuation effects. These features of electrical transport have not been much explored for heteroepitaxial, n-type degenerate GaN films, possessing high density of dislocations and point defects.