Impact of Oxygen Pressure on Ferroelectric Stability of La-doped Hafnia Grown by PLD
Abstract
Thin films of HfO2 doped with 4% La were fabricated on LSMO/STO (100) substrates using pulsed laser deposition. The stability of the ferroelectric orthorhombic phase in the hafnia films was investigated with respect to varying oxygen pressure during deposition. X-ray diffraction and X-ray photoelectron spectroscopy measurements were carried out to analyze the structure and composition of the films and correlated with their ferroelectric properties. Surprisingly, the ferroelectricity of the hafnia films showed a dependence on oxygen pressure during deposition of LSMO bottom electrode as well. The reason for this dependence is discussed in terms of the active role of non-lattice oxygen in the ferroelectric switching of hafnia.
- Publication:
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arXiv e-prints
- Pub Date:
- August 2023
- DOI:
- 10.48550/arXiv.2308.07600
- arXiv:
- arXiv:2308.07600
- Bibcode:
- 2023arXiv230807600N
- Keywords:
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- Condensed Matter - Materials Science