Effective Landau-type model of a HfxZr1 −xO2-graphene nanostructure

To describe charge-polarization coupling in the nanostructure formed by a thin Hf_xZr_{1 −x}O₂ film with single-layer graphene as the top electrode, we develop the "effective" Landau-Ginzburg-Devonshire model. This approach is based on the parametrization of the Landau expansion coefficients for polar (ferroelectric) and antipolar (antiferroelectric) orderings in thin Hf_{1 −x}Zr_xO₂ films from a limited number of polarization-field curves and hysteresis loops. The Landau expansion coefficients are nonlinearly dependent on the film thickness, h, and Zr /[Hf +Zr ] ratio, x, in contrast to h-independent and linearly-x-dependent expansion coefficients of classical Landau energy. We explain the dependence of the Landau expansion coefficients by the strong nonmonotonic dependence of the polar properties on the Hf_{1 −x}Zr_xO₂ film thickness, grain size, and surface energy. The proposed Landau free energy with five effective expansion coefficients, which are interpolation functions of x and h, describes the continuous transformation of polarization dependences on applied electric field and hysteresis loop shapes induced by changes to x and h in the range 0 < x < 1 and 5 nm < h < 35 nm. Using the effective free energy, we demonstrate that polarization of Hf_{1 −x}Zr_xO₂ films influences the graphene conductivity strongly, and the full correlation between the distribution of polarization and charge carriers in graphene is revealed. In accordance with our modeling, polarization of the 5-25-nm-thick Hf_{1 −x}Zr_xO₂ films, which are in ferroelectriclike or antiferroelectriclike states for chemical compositions of 0.35 ≤ x ≤ 0.95, determine the concentration of carriers in graphene and can control its field dependence. The result is promising for the creation of next-generation Si -compatible nonvolatile memories and graphene-ferroelectric FETs, because the working voltages applied to the Hf_{1 −x}Zr_xO₂ film (which acts as a gate) can be relatively low (less than 2 V). These low voltages are sufficient to induce the pronounced hysteresis of ferroelectric polarization in the Hf_{1 −x}Zr_xO₂ gate, which, due to strong electric coupling, induces hysteresis of the graphene charge.