Moment canting and domain effects in antiferromagnetic DyRh2Si2
Abstract
A combined experimental and theoretical study of the layered antiferromagnetic compound DyRh2Si2 in the ThCr2Si2 -type structure is presented. The heat capacity shows two transitions upon cooling: The first one at the Néel temperature TN=55 K and a second one at TN 2=12 K . Using magnetization measurements, we study the canting process of the Dy moments upon changing the temperature and can assign TN 2 to the onset of the canting of the magnetic moments towards the [100] direction away from the c axis. Furthermore, we found that the field dependence of the magnetization is highly anisotropic and shows a two-step process for H ∥001 . We used a mean-field model to determine the crystalline electric field as well as the exchange interaction parameters. Our magnetization data together with the calculations reveal a moment orientation close to the [101] direction in the tetragonal structure at low temperatures and fields. Applying photoemission electron microscopy, we explore the (001) surface of the cleaved DyRh2Si2 single crystal and visualize Si- and Dy-terminated surfaces. Our results indicate that the Si-Rh-Si surface protects the deeper lying magnetically active Dy layers and is thus attractive for investigation of magnetic domains and their properties in the large family of LnT2Si2 materials.
- Publication:
-
Physical Review B
- Pub Date:
- June 2023
- DOI:
- 10.1103/PhysRevB.107.224424
- arXiv:
- arXiv:2304.08607
- Bibcode:
- 2023PhRvB.107v4424K
- Keywords:
-
- Condensed Matter - Strongly Correlated Electrons;
- Condensed Matter - Materials Science
- E-Print:
- doi:10.1103/PhysRevB.107.224424