Radio-Frequency Reflectometry in Bilayer Graphene Devices Utilizing Microscale Graphite Back-Gates

Bilayer graphene is an attractive material that hosts a high-quality two-dimensional electron gas with a controllable band gap. By utilizing the band gap, electrical gate tuning of the carrier is possible and formation of nanostructures such as quantum dots has been reported. To probe the dynamics of the electronic states and realize applications for quantum bit devices, radio-frequency (rf) reflectometry, which enables high-speed electrical measurements, is important. Here we demonstrate rf reflectometry in bilayer graphene devices. We utilize a microscale graphite back-gate and an undoped Si substrate to reduce the parasitic capacitance, which degrades the rf reflectometry measurement. We measure the resonance properties including the matching condition of a tank circuit, which contains the bilayer graphene device. We construct a demodulated rf reflectometry setup and compare the result with dc measurement, and confirm their consistency. The wide-range frequency-dependent noise behavior is also analyzed. From the noise analysis, we calculate the readout error rate of our device for single-electron detection and demonstrate that a vertically integrated charge sensor has the potential to achieve a low error rate. We also measure Coulomb diamonds of quantum dots possibly formed by bubbles and confirm that rf reflectometry of quantum dots can be performed. This technique enables high-speed measurements of bilayer graphene quantum dots and contributes to the study of bilayer-graphene-based quantum devices by fast readout of the states.