Single event tolerance of x-ray silicon-on-insulator pixel sensors
Abstract
We evaluate the single event tolerance of the x-ray silicon-on-insulator (SOI) pixel sensor named XRPIX, developed for the future x-ray astronomical satellite FORCE. In this work, we measure the cross-section of single event upset (SEU) of the shift register on XRPIX by irradiating heavy ion beams with linear energy transfer (LET) ranging from 0.022 to 68 MeV / ( mg/cm2 ) . From the SEU cross-section curve, the saturation cross-section and threshold LET are successfully obtained to be 3.4−0.9+2.9×10−10 cm2/bit and 7.3−3.5+1.9 MeV/(mg/cm2), respectively. Using these values, the SEU rate in orbit is estimated to be ≲ 0.1 event / year primarily due to the secondary particles induced by cosmic-ray protons. This SEU rate of the shift register on XRPIX is negligible in the FORCE orbit.
- Publication:
-
Journal of Astronomical Telescopes, Instruments, and Systems
- Pub Date:
- October 2022
- DOI:
- 10.1117/1.JATIS.8.4.046001
- arXiv:
- arXiv:2210.05049
- Bibcode:
- 2022JATIS...8d6001H
- Keywords:
-
- single event effect;
- silicon-on-insulator;
- x-ray detector;
- x-ray astronomy;
- Astrophysics - Instrumentation and Methods for Astrophysics;
- Physics - Instrumentation and Detectors
- E-Print:
- 9 pages, 5 figures, accepted for publication in JATIS