Surface state mediated ferromagnetism in Mn0.14Bi1.86Te3 thin films
Abstract
A spontaneous ferromagnetic moment can be induced in Bi2Te3 thin films below a temperature T ≈16 K by the introduction of Mn dopants. We demonstrate that films grown via molecular beam epitaxy with the stoichiometry Mn0.14Bi1.86Te3 maintain the crystal structure of pure Bi2Te3 . The van der Waals nature of interlayer forces in the Mn0.14Bi1.86Te3 crystal causes lattice mismatch with the underlayer to have a limited effect on the resulting crystal structure, as we demonstrate by thin film growth on tetragonal MgF2 (110) and NiF2 (110). Electronic transport and magnetic moment measurements show that the ferromagnetic moment of the Mn0.14Bi1.86Te3 thin films is enhanced as the Fermi level moves from the bulk conduction band and toward the bulk band gap, suggesting that electronic surface states play an important role in mediating the ferromagnetic order. Ferromagnetic Mn0.14Bi1.86Te3 /antiferromagnetic NiF2 bilayers show evidence that the ferromagnetic moment of the Mn0.14Bi1.86Te3 film is suppressed, suggesting the existence of an interface effect between the two magnetic layers.
- Publication:
-
Physical Review Materials
- Pub Date:
- March 2023
- DOI:
- 10.1103/PhysRevMaterials.7.034201
- arXiv:
- arXiv:2209.00155
- Bibcode:
- 2023PhRvM...7c4201V
- Keywords:
-
- Condensed Matter - Materials Science;
- Condensed Matter - Mesoscale and Nanoscale Physics