Quantum anomalous Hall phase and effective in-plane Lande-g factor in an inverted quantum well

A suitable magnetic doped InAs/GaSb or HgTe/CdTe quantum well (QW) shows the coexistence of the quantum spin Hall and quantum anomalous Hall (QAH) phases. We study the topological transitions between these two topological states and confirm the possibility of the QAH phase through the calculations of quantum Hall conductance. The Hall plateau occurs at $e^2/h$ rather than $2e^2/h$ at such a doping state indicating a QAH phase. Also, the latest experiment reported a robust quantized Hall conductance that persists in an in-plane magnetic field as strong as 12 Tesla. Based on the results of the cited experiment, we present here a precise calculation of the effective in-plane Lande-g factor. The paper predicts a certain range of controllable parameters in an inverted QW for enabling a dissipationless charge transport needed for spintronics application.